Title: Preparation of tin disulphide thin films by solution growth

Authors: A.J. Varkey

Addresses: Department of Physics, University of Swaziland, Private Bag Kwaluseni, Swaziland

Abstract: A chemical method has been developed for depositing tin disulphide (SnS,) thin films onto glass substrates at room temperature. The films were found to have n type conductivity with optical band gap of about 2.3 eV. Some of the optical and electrical properties of these films were also investigated.

Keywords: solution growth; thin films; tin disulphide; glass substrates; deposition; optical properties; electrical properties.

DOI: 10.1504/IJMPT.1997.036383

International Journal of Materials and Product Technology, 1997 Vol.12 No.4/5/6, pp.490 - 495

Published online: 02 Nov 2010 *

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