Preparation of tin disulphide thin films by solution growth
by A.J. Varkey
International Journal of Materials and Product Technology (IJMPT), Vol. 12, No. 4/5/6, 1997

Abstract: A chemical method has been developed for depositing tin disulphide (SnS,) thin films onto glass substrates at room temperature. The films were found to have n type conductivity with optical band gap of about 2.3 eV. Some of the optical and electrical properties of these films were also investigated.

Online publication date: Tue, 02-Nov-2010

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