Authors: Xavier Jehl, Marc Sanquer, J. Gautier, M. Vinet
Addresses: LaTEQS, CEA-DSM-INAC-SPSMS, 17 rue des Martyrs 38054, France. ' LaTEQS, CEA-DSM-INAC-SPSMS, 17 rue des Martyrs 38054, France. ' D2NT, CEA-LETI, 17 rue des Martyrs 38054, France. ' D2NT, CEA-LETI, 17 rue des Martyrs 38054, France
Abstract: In this contribution, we review the differences and similarities between the field effect transistor (FET) and the single electron transistor (SET) made of silicon. We show that there is a convergence in both types of devices when shrinking the dimensions and this convergence is driven by the value and the nature of the access resistances to the channel. Access resistance above the quantum of resistance will produce single electron effects in the channel and this is illustrated in the case of a non-overlapped geometry for silicon nanowire MOSFETs. Considerations about the origin of the intrinsic resistance of the access regions and about their variability are also presented. We expect future generations of MOSFET to exhibit more and more the reported SET effects due to the high resistance of their ultra-scaled nano-access.
Keywords: single electron effect; CMOS devices; quantum electronic transport; silicon nanowires; nanoelectronics; nanotechnolgy; field effect transistors; FET; single electron transistors; SET; MOSFETs.
International Journal of Nanotechnology, 2010 Vol.7 No.4/5/6/7/8, pp.288 - 303
Published online: 21 Feb 2010 *Full-text access for editors Access for subscribers Purchase this article Comment on this article