Authors: A. Settaouti, L. Settaouti
Addresses: Electrotechnic Department, University of Sciences and Technology, P.O. Box 1505 EL-M'naouar, Oran, Algeria. ' Electrotechnic Department, University of Sciences and Technology, P.O. Box 1505 EL-M'naouar, Oran, Algeria
Abstract: Sputter deposition is a complex process; it is obvious that the energy and direction of the particles arriving at the substrate is in close relation with the transport process from the targets to the substrate. It is desirable to model this transport of atoms through the background gas. Results are presented for Monte Carlo simulation of the sputtered atom transport in systems with Facing Targets Sputtering (FTS). The sputtering system geometry, gas pressure and the gap between the targets strongly influence the features of the forward and backward sputtered atom flows, impact angle, and energy of depositing atoms.
Keywords: Monte Carlo simulation; sputtering; sputtered particle transport; sputter deposition; sputtered atom transport; sputtering system geometry; gas pressure.
International Journal of Surface Science and Engineering, 2008 Vol.2 No.6, pp.488 - 501
Published online: 26 Dec 2008 *Full-text access for editors Access for subscribers Purchase this article Comment on this article