Title: Non-destructive evaluation methods for subsurface damage in silicon wafers: a literature review
Authors: Weike Lu, Z.J. Pei, J.G. Sun
Addresses: Department of Industrial and Manufacturing Systems Engineering, Kansas State University, Manhattan, KS 66502, USA. ' Department of Industrial and Manufacturing Systems Engineering, Kansas State University, Manhattan, KS 66502, USA. ' Energy Technology Division, Argonne National Laboratory, Argonne, IL 60439, USA
Abstract: The Subsurface Damage (SSD) in silicon wafers induced by any mechanical material-removal processes has to be removed by subsequent processes. Therefore, the measurement of SSD is critically important for cost-effective manufacturing of silicon wafers. This review paper presents several Non-Destructive Evaluation (NDE) methods for SSD in silicon wafers, including X-ray diffraction, micro-Raman spectroscopy, photoluminescence and laser scattering.
Keywords: SSD measurement; non-destructive evaluation; NDE; silicon wafers; subsurface damage; ultraprecision machining; literature review; material removal; X-ray diffraction; micro-Raman spectroscopy; photoluminescence; laser scattering.
International Journal of Machining and Machinability of Materials, 2007 Vol.2 No.1, pp.125 - 142
Published online: 06 Mar 2007 *Full-text access for editors Full-text access for subscribers Purchase this article Comment on this article