Title: Characterisation of short channel effects for 14 nm tri-layered strained channel HOI FinFET using high-K dielectric materials

Authors: Priyanka Saha; Rudra Sankar Dhar

Addresses: Department of Electronics and Communication Engineering, National Institute of Technology Mizoram, Aizawl, Mizoram, 796012, India ' Department of Electronics and Communication Engineering, National Institute of Technology Mizoram, Aizawl, Mizoram, 796012, India

Abstract: In strain technology, a modification in the MOSFET by growing heterostructure channel embedded with Si/SiGe/Si layers within the system enhances its working tremendously. Developing a tri-layered HOI n-channel FinFET device at 14 nm gate length having two strained Si layers and one strained SiGe in between along with the use of high-k dielectric materials like HfO₂, ZrO₂ and Si₃N₄ as gate oxide decreases the short channel effects like DIBL and enhances the I_on/I_off, threshold voltage. These parameters have been analysed for better performance by replacing SiO₂ as gate oxide with the different high permittivity materials. This paper explores considering equivalent oxide thickness calculations, and is optimised using Silvaco TCAD software. Also HOI device is compared with the results obtained for a FinFET and the results are observed in both cases with the drain current enhancement. Thus, it is perceived that this HOI device with HfO₂ gives the utmost outcome.

Keywords: HOI; high-K dielectric; Silvaco TCAD; EOT; strained silicon.

DOI: 10.1504/IJNP.2022.126376

International Journal of Nanoparticles, 2022 Vol.14 No.2/3/4, pp.202 - 212

Received: 28 Sep 2021
Accepted: 09 Feb 2022
Published online: 24 Oct 2022 *

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