Characterisation of short channel effects for 14 nm tri-layered strained channel HOI FinFET using high-K dielectric materials Online publication date: Mon, 24-Oct-2022
by Priyanka Saha; Rudra Sankar Dhar
International Journal of Nanoparticles (IJNP), Vol. 14, No. 2/3/4, 2022
Abstract: In strain technology, a modification in the MOSFET by growing heterostructure channel embedded with Si/SiGe/Si layers within the system enhances its working tremendously. Developing a tri-layered HOI n-channel FinFET device at 14 nm gate length having two strained Si layers and one strained SiGe in between along with the use of high-k dielectric materials like HfO2, ZrO2 and Si3N4 as gate oxide decreases the short channel effects like DIBL and enhances the Ion/Ioff, threshold voltage. These parameters have been analysed for better performance by replacing SiO2 as gate oxide with the different high permittivity materials. This paper explores considering equivalent oxide thickness calculations, and is optimised using Silvaco TCAD software. Also HOI device is compared with the results obtained for a FinFET and the results are observed in both cases with the drain current enhancement. Thus, it is perceived that this HOI device with HfO2 gives the utmost outcome.
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