Title: Effect of post-sputter oxidation temperature on the cerium thin films grown by DC sputtering method

Authors: A.R.M. Zabidi; Z. Hassan; W.F. Lim

Addresses: Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, 11800 Penang, Malaysia ' Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, 11800 Penang, Malaysia ' Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, 11800 Penang, Malaysia

Abstract: Cerium films deposited on n-type Si (100) substrate by direct current (DC) sputtering were transformed into cerium oxide (CeO2) after subjected to post-sputter oxidation at various temperatures (400, 600 and 800°C) in an oxygen ambient. A gradual transformation from oxygen-poor CeO2 at 400°C to oxygen-rich CeO2 occurred between 600 and 800°C. A larger energy band gap (3.61 eV) was attained by CeO2 film subjected to post-sputter oxidation temperature at 800°C, which indicated the occurrence of electron transition closer to the Ce4f state. The lowest leakage current density (~10-9 Acm-2) and high breakdown voltage were obtained by CeO2 thin film oxidised at 800°C.

Keywords: CeO2 thin film; DC sputtering; temperature; oxygen ambient; post-sputter oxidation; current density; oxygen vacancies.

DOI: 10.1504/IJNT.2022.124501

International Journal of Nanotechnology, 2022 Vol.19 No.2/3/4/5, pp.198 - 210

Published online: 27 Jul 2022 *

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