Effect of post-sputter oxidation temperature on the cerium thin films grown by DC sputtering method
by A.R.M. Zabidi; Z. Hassan; W.F. Lim
International Journal of Nanotechnology (IJNT), Vol. 19, No. 2/3/4/5, 2022

Abstract: Cerium films deposited on n-type Si (100) substrate by direct current (DC) sputtering were transformed into cerium oxide (CeO₂) after subjected to post-sputter oxidation at various temperatures (400, 600 and 800°C) in an oxygen ambient. A gradual transformation from oxygen-poor CeO₂ at 400°C to oxygen-rich CeO₂ occurred between 600 and 800°C. A larger energy band gap (3.61 eV) was attained by CeO₂ film subjected to post-sputter oxidation temperature at 800°C, which indicated the occurrence of electron transition closer to the Ce4f state. The lowest leakage current density (~10^-9 Acm^-2) and high breakdown voltage were obtained by CeO₂ thin film oxidised at 800°C.

Online publication date: Wed, 27-Jul-2022

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