Title: Three-dimensional modelling of Ge_1-xSi_x by the Travelling Solvent Method: the effect of rotation and misalignment of the sample

Authors: M. Sohail, M.Z. Saghir, T.J. Makriyannis

Addresses: Department of Mechanical and Industrial Engineering, Ryerson University, 350 Victoria St, Toronto, ON, M5B 2K3, Canada. ' Department of Mechanical and Industrial Engineering, Ryerson University, 350 Victoria St, Toronto, ON, M5B 2K3, Canada. ' Gulfstream Aerospace Corporation, 135 Crossroads Parkway, Savannah, GA 31408, USA

Abstract: A numerical simulation study is carried out for the crystal growth of Ge_1-xSi_x by the Travelling Heater Method (THM). The effects of a geometrical misalignment and rotation on the crystal growth are investigated. The full Navier-Stokes equations together with the energy, mass transport and continuity equations are solved numerically using the finite element technique. The application of a crucible rotation and misalignment is shown to have a considerable effect on the buoyancy induced flow. An optimal rotational speed was found that lessened the convective flow and provided a uniform concentration along the growth interface.

Keywords: misalignment; rotation; travelling solvent method; TSM; axial velocity; silicon distribution; 3D modelling; numerical simulation; crystal growth; FEM; finite element method; buoyancy induced flow; convection; fluid flow; heat transfer; mass transfer.

DOI: 10.1504/PCFD.2006.010771

Progress in Computational Fluid Dynamics, An International Journal, 2006 Vol.6 No.6, pp.314 - 320

Published online: 30 Aug 2006 *

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