Three-dimensional modelling of Ge_1-xSi_x by the Travelling Solvent Method: the effect of rotation and misalignment of the sample
by M. Sohail, M.Z. Saghir, T.J. Makriyannis
Progress in Computational Fluid Dynamics, An International Journal (PCFD), Vol. 6, No. 6, 2006

Abstract: A numerical simulation study is carried out for the crystal growth of Ge_1-xSi_x by the Travelling Heater Method (THM). The effects of a geometrical misalignment and rotation on the crystal growth are investigated. The full Navier-Stokes equations together with the energy, mass transport and continuity equations are solved numerically using the finite element technique. The application of a crucible rotation and misalignment is shown to have a considerable effect on the buoyancy induced flow. An optimal rotational speed was found that lessened the convective flow and provided a uniform concentration along the growth interface.

Online publication date: Wed, 30-Aug-2006

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