Fabrication and evaluation for extremely thin Si wafer
by Libo Zhou, Bahman Soltani Hosseini, Tatsuya Tsuruga, Jun Shimizu, Hiroshi Eda, Sumio Kamiya, Hisao Iwase, Yoshiaki Tashiro
International Journal of Abrasive Technology (IJAT), Vol. 1, No. 1, 2007

Abstract: Grinding process on the Si wafer develops subsurface damage, which remarkably degrades deflective strength of the wafer and constitutes a barrier against producing a thin wafer for low-profile packaging. In this paper, the authors propose a new index for evaluation of the Degree of Subsurface Damage (DSD). Requiring no costly instrument, the new index is easily calculated via the external geometry of the ground wafer. With the new index, it is able to quantitatively evaluate the subsurface damage introduced by different processes (or wheel) and to estimate the minimally achievable thickness of the wafer by each process. Also, a novel fixed abrasive process of Chemo-Mechanical Grinding (CMG) has been proposed for stress relief. All results indicate that the subsurface damage after CMG is nearly zero.

Online publication date: Wed, 30-May-2007

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