Int. J. of Nanomanufacturing   »   2016 Vol.12, No.3/4

 

 

Title: Review of inorganic semiconductor based ultraviolet photodetectors with high internal gain and fast recovery speed

 

Authors: Fanrong Lin; Leixin Meng

 

Addresses:
Lanzhou University, 222 South Tianshui Road, Lanzhou, Gansu 730000, China
Lanzhou University, 222 South Tianshui Road, Lanzhou, Gansu 730000, China

 

Abstract: Ultraviolet (UV) photodetectors have important applications in military field, industrial field, environmental field, etc. High performance UV photodetectors characterised as high internal gain (G) and high recovery speed has been studied in decades. In this article, we provide a comprehensive review about recent works on increasing the internal gain of UV photodetectors by improving device configuration, optimising the diameter of the nanowire, applying surface functionalisation and Schottky contact. And the possible solutions to the persistent photoconductivity (PPC) problem which prolongs the recovery time are also discussed.

 

Keywords: ultraviolet photodetectors; UV photodetectors; internal gain; photo response; recovery time; metal oxide; persistent photoconductivity; sensitivity; inorganic semiconductors; recovery speed.

 

DOI: 10.1504/IJNM.2016.079222

 

Int. J. of Nanomanufacturing, 2016 Vol.12, No.3/4, pp.320 - 335

 

Submission date: 14 Jun 2015
Date of acceptance: 14 Jan 2016
Available online: 20 Sep 2016

 

 

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