Title: Design and comparison of 0.18-µm CMOS power amplifiers for ultra-wide-band applications

Authors: Vishakha P. Bhale; Upena D. Dalal; Rajendra M. Patrikar

Addresses: Department of Electronics Engineering, Sardar Vallabhbhai National Institute of Technology (SV NIT), Surat, Gujarat, India ' Department of Electronics Engineering, Sardar Vallabhbhai National Institute of Technology (SV NIT), Surat, Gujarat, India ' Department of Electronics Engineering, Visvesvaraya National Institute of Technology (V NIT), Nagpur, Maharashtra, India

Abstract: With the help of standard power amplifier design steps, four class AB power amplifier topologies are designed and compared using 0.18-μm CMOS process for 3-5-GHz ultra-wide-band applications. The proposed four topologies are: basic common source topology, cascode topology, cascoded current reused topology, and the two-stage power amplifier topology. Comparison of the four designs has been made to the parameters such as power gain, input and output matching, reverse isolation, power-added efficiency, stability, and linearity and noise figure. By comparison, it is found that the two-stage design with cascoded current reused topology as first stage and common source topology as second stage achieves the best performance among the four designs.

Keywords: cascode topology; current reused topology; efficiency; group delay; CMOS power amplifiers; resistive feedback; source degeneration; shunt peaking; stability; UWB applications; ultra-wideband; linearity; power amplifier design; common source topology.

DOI: 10.1504/IJWMC.2015.074038

International Journal of Wireless and Mobile Computing, 2015 Vol.9 No.4, pp.307 - 316

Received: 03 Feb 2015
Accepted: 10 Jul 2015
Published online: 03 Jan 2016 *

Full-text access for editors Full-text access for subscribers Purchase this article Comment on this article