Title: AC response of AlN/GaN double-barrier resonant tunnelling diodes

Authors: Rabab Mohammad Farraj, Azhar A. Ansari, Farag S. Al-Hazmi

Addresses: Department of Physics, Faculty of Science, King Abdulaziz University, PO Box 80203, Jeddah 21589, KSA. ' Department of Physics, Faculty of Science, King Abdulaziz University, PO Box 80203, Jeddah 21589, KSA. ' Department of Physics, Faculty of Science, King Abdulaziz University, PO Box 80203, Jeddah 21589, KSA

Abstract: Capacitance-voltage (C-V) measurements of GaN/AlN double barrier resonant tunnelling diodes have been made at 77K and 300K. Capacitance-frequency measurements were also made over frequency range of 50Hz-1MHz with a view to study the behaviour of traps located in the quantum well. The role of 2DEG has also been taken into account to explain the observed C-V response. The behaviour of the 2DEG as a function of bias voltages has been simulated by using a computer program and it predicts correctly the vanishing of capacitance at higher biases.

Keywords: resonant tunnelling; double-barrier diodes; GaN-AlN heterostructure; aluminium nitride; gallium nitride; nanoelectronics; capacitance voltage; capacitance frequency; DBRTD; nanotechnology.

DOI: 10.1504/IJNM.2009.028112

International Journal of Nanomanufacturing, 2009 Vol.4 No.1/2/3/4, pp.69 - 76

Published online: 07 Sep 2009 *

Full-text access for editors Full-text access for subscribers Purchase this article Comment on this article