AC response of AlN/GaN double-barrier resonant tunnelling diodes
by Rabab Mohammad Farraj, Azhar A. Ansari, Farag S. Al-Hazmi
International Journal of Nanomanufacturing (IJNM), Vol. 4, No. 1/2/3/4, 2009

Abstract: Capacitance-voltage (C-V) measurements of GaN/AlN double barrier resonant tunnelling diodes have been made at 77K and 300K. Capacitance-frequency measurements were also made over frequency range of 50Hz-1MHz with a view to study the behaviour of traps located in the quantum well. The role of 2DEG has also been taken into account to explain the observed C-V response. The behaviour of the 2DEG as a function of bias voltages has been simulated by using a computer program and it predicts correctly the vanishing of capacitance at higher biases.

Online publication date: Mon, 07-Sep-2009

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