MM-wave double drift IMPATT diode: a comparison of experimental, theoretical and neural network approach
by P.R. Tripathy; S.K. Choudhury; S.P. Pati
International Journal of Nano and Biomaterials (IJNBM), Vol. 7, No. 4, 2018

Abstract: This paper presents the comparison of simulation and experimental output with the neural network results of different materials like Si and GaAs-based IMPATT diode at 94 GHz window frequency. The experimental results are nearly equal to simulation results and show a quantitative agreement between theoretical values and experimental output. The experimental results in terms of efficiency and RF power are almost 80-85% of the simulation results. Rest has 15-20% discrepancy between theory and experiment due to several causes like temperature, small-signal approach, parasitic effects, impedance matching problem and proper heat-sink arrangements. The developed neural network model is used to optimise performance of the diode by taking other wide band gap semiconductor material-based IMPATT diode. The model and the results will be very useful for applications in radar and guided missile technology.

Online publication date: Wed, 26-Sep-2018

The full text of this article is only available to individual subscribers or to users at subscribing institutions.

Existing subscribers:
Go to Inderscience Online Journals to access the Full Text of this article.

Pay per view:
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.

Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Nano and Biomaterials (IJNBM):
Login with your Inderscience username and password:

    Username:        Password:         

Forgotten your password?

Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.

If you still need assistance, please email