Some recent trends in the fabrication, functionalisation and characterisation of metal oxide nanowire gas sensors
by Andrei Kolmakov
International Journal of Nanotechnology (IJNT), Vol. 5, No. 4/5, 2008

Abstract: Due to strong interdependence of the electron transport and surface processes in quasi 1-D metal oxide nanostructures, chemiresistors and field effect transistors (FETs) based on nanowires perform excellently as sensing elements and may be able to compete with traditional thin film sensors in the field of solid state sensorics. Namely, applications requiring a stable, reproducible sensing element of small size with sensitive performance will benefit from this new platform. In this report, a few recent trends in the fabrication, functionalisation and characterisation of quasi 1-D metal oxide nanowire sensors are reviewed.

Online publication date: Fri, 07-Mar-2008

The full text of this article is only available to individual subscribers or to users at subscribing institutions.

 
Existing subscribers:
Go to Inderscience Online Journals to access the Full Text of this article.

Pay per view:
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.

Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Nanotechnology (IJNT):
Login with your Inderscience username and password:

Username:        Password:          Forgotten your password?

Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.

If you still need assistance, please email subs@inderscience.com