Band structure investigation of strained Si1-xGex/Si coupled quantum wells
by F. Lu, W.J. Fan, Y.X. Dang, D.H. Zhang, S.F. Yoon, R. Wang
International Journal of Nanotechnology (IJNT), Vol. 4, No. 4, 2007

Abstract: The band structure of Si_1-xGe_x/Si coupled quantum wells (CQW) was calculated with the 8-band k · p method. Both strain and spin-orbit split-off band effect were taken into account. The subband energy of the Si_0.6Ge_0.4/Si quantum well as a function of barrier width and well width was calculated. Barrier width varies between 20~60 Å while well width varies between 30~110 Å. Finally, the relationship between subband energy and Ge composition range from 10% to 60% was also shown.

Online publication date: Tue, 05-Jun-2007

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