Growth mechanism and optical properties of zinc oxide thin film Online publication date: Sat, 24-May-2014
by Sanusi Abdullahi; Musa Momoh; Kasim Uthman Isah
International Journal of Renewable Energy Technology (IJRET), Vol. 5, No. 2, 2014
Abstract: Zinc oxide (ZnO) thin films were successfully deposited on glass substrate by radio frequency (RF) sputtering technique. One set of the samples was annealed in open air at temperatures of 423 K, 573 K and 723 K for one hour while another set of samples was annealed under nitrogen atmosphere for the same duration of time and temperature as the other set. A growth mechanism for thin film growth by RF sputtering has been presented. The films were also characterised to assess their optical properties. The ZnO thin films showed good transmittance, low reflectance and good absorbance in the visible region. The energy band gap (Eg) obtained is in the range of (3.15-3.28 eV) which is good for window layer of a solar cell. Other optical constants evaluated include refractive index and the extinction coefficient.
Online publication date: Sat, 24-May-2014
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Renewable Energy Technology (IJRET):
Login with your Inderscience username and password:
Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.
If you still need assistance, please email email@example.com