Optimisation of the physical properties of InAs/InGaAs/GaAs QDs heterostructures embedded p-i-n GaAs solar cell
by Maher Ezzdini; Bilel Azeza; Saoussen Rekaya; Mohamed Helmi Hadj Alouane; Larbi Sfaxi; Ridha M'ghaieth; Nicolas Chauvin; Hassen Maaref; Catherine Bru-Chevallier
International Journal of Nanotechnology (IJNT), Vol. 10, No. 5/6/7, 2013

Abstract: In order to enhance absorption at infrared range for GaAs-based solar cell, we have grown multi-stacked InAs/InGaAs/GaAs quantum dots (QDs) heterostructure in the active region by Solid-Source Molecular Beam Epitaxy (SS-MBE). Two different families of dots were observed in the photoluminescence (PL) spectra. Temperature-dependent study was carried out at 10-240 K temperature range. Distinctive, asymmetric shape located in the high energy for the PL spectra of the QD solar cell sample can be deconvoluted in two sub-bands. From the temperature-dependent PL measurement, the two sub-bands are associated with the ground-state emission from the two families of InAs dots with different size. Besides, the spectral response of multi-stacked InAs/InGaAs QD solar cells extends the photo-absorption spectra towards a wavelength longer than the GaAs bandgap of 1280 nm. However, the QDs solar cell shows an enhanced short-circuits current density of 7.8 mA/cm² compared to the GaAs reference cell. The performance of the QD solar cells indicates that the InAs/InGaAs/GaAs QD heterostructures facilitate the fabrication of highly stacked QD layers that are suitable for solar cells devices requiring thick QD layers for sufficient light absorption.

Online publication date: Sat, 27-Apr-2013

The full text of this article is only available to individual subscribers or to users at subscribing institutions.

Existing subscribers:
Go to Inderscience Online Journals to access the Full Text of this article.

Pay per view:
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.

Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Nanotechnology (IJNT):
Login with your Inderscience username and password:

    Username:        Password:         

Forgotten your password?

Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.

If you still need assistance, please email subs@inderscience.com