Ion erosion induced nanostructured semiconductor surfaces Online publication date: Thu, 04-Oct-2012
by V. Venugopal; T. Basu; S. Garg; J.K. Tripathi; S. Chandramohan; P. Das; T.K. Chini; S.R. Bhattacharyya; D. Kanjilal; T. Som
International Journal of Nanotechnology (IJNT), Vol. 9, No. 10/11/12, 2012
Abstract: We consider nanostructures formed on semiconductor surfaces of Si(100), InP(100) and GaAs using medium energy (50-100 keV) Ar+-ion beam sputtering. The issues of dependence of nanostructure formation on these semiconductor substrates on ion-energy, -fluence, -flux, angle of incidence, and crystallographic orientation are addressed. The threshold fluence for formation of nano-islands on Si(100) implanted with normally incident 50 keV Ar+-ions was found to be 2 × 1017 ions/cm². For InP(100) implanted with 100 keV Ar+-ions an increase in angle of incidence results in decrease of surface roughness. Surfaces of GaAs(100) and GaAs(111) implanted with normally incident 50 keV Ar+-ions show nanopits of density 34 × 109/cm². The existing theories are applied to explain the formation of observed surface nanostructures.
Online publication date: Thu, 04-Oct-2012
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