Study of the additives influence in the CMP slurry for the surfaces planarisation covered by selective transfer
by Filip Ilie; George Ipate
International Journal of Surface Science and Engineering (IJSURFSE), Vol. 14, No. 2, 2020

Abstract: Chemical mechanical planarisation (CMP) is the only effective technique for obtaining surfaces with higher resolution and flatness, by removing the metal excess obtained in the selective-transfer process. The CMP process of the selective-layer assumes layer surface oxidation, protection its, and passivation layer removal from the tops of the protrusions by abrasive particles mechanical action. The selective-layer slurry consists of hydrogen peroxide (H2O2) as an oxidiser, organic acids as complexing and etching agents, benzotriazole (BTA) as a corrosion inhibitor and silica (SiO2) particles as abrasive. To a higher removal rate and better slurry stability was used the citric acid, and BTA controlled adding in slurry could change the removal and etching rate of the selective-layer. This paper analyses the additives effect in CMP slurry on the polishing of covered surfaces through selective-transfer, considering removal and etching rates, as well as the slurry behaviour with different types and concentrations of additives, in various proportions.

Online publication date: Mon, 06-Jul-2020

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