Title: Electrical parameter analysis of gate-extension on source of germanium tri-gate FinFET

Authors: Rajashree Das; Srimanta Baishya

Addresses: Department of Electronics and Communication Engineering, National Institute of Technology Silchar, Silchar, Silchar, 788010, Assam, India ' Department of Electronics and Communication Engineering, National Institute of Technology Silchar, Silchar, Silchar, 788010, Assam, India

Abstract: This paper presents the impact of geometrical and the electrical parameters such as the concentration in channel region, variation of temperature, drain potential, gate work function, and electrostatic potential on the electrical characteristics of germanium (Ge) FinFET with two stacked gate dielectrics overlap on the source. The presented device exhibits better performance in terms of ION, IOFF, and ION/IOFF compared to the conventional FinFET structure.

Keywords: dual dielectric; FinFET; germanium; silicon; source overlap.

DOI: 10.1504/IJNP.2019.099183

International Journal of Nanoparticles, 2019 Vol.11 No.2, pp.130 - 139

Available online: 29 Mar 2019 *

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