Title: Nanoscale T-shaped AlGaN/GaN HEMT with improved DC and RF performance

Authors: Meryleen Mohapatra; Tanmoy De; A.K. Panda

Addresses: Department of Electronics and Communication Engineering, Institute of Technical Education and Research, Siksha 'O' Anusandhan (Deemed to be University), Bhubaneswar, 751030, Odisha, India ' Reecomps Tele Services Pvt. Ltd., Sector V, Salt Lake, Kolkata, West Bengal, 700091, India ' Department of Electronics and Communication Engineering, National Institute of Science and Technology (NIST), Palur Hills, Berhampur, 761 008, Odisha, India

Abstract: AlGaN/GaN-based HEMT with different gate structure are designed i.e., 150 nm rectangular shaped HEMT and 90 nm T-shaped HEMT. It is shown that the DC parameters like drain current, transconductance are improved for T-shaped HEMT as compared to normal gate HEMT. The maximum cut-off frequency for normal gate HEMT is 24 GHz at drain voltage of 20 V and gate voltage of 2 V whereas it is 47 GHz for the T-shaped HEMT. Maximum frequency of oscillation for normal gate HEMT is 95 GHz and for T-shaped HEMT, it is 115 GHz. At the frequency of 5 GHz, the minimum noise figure of the normal gate HEMT is 0.13 dB and for T-shaped HEMT, it is 0.05 dB. Intrinsic time delay of normal gate HEMT is 22 ps whereas the intrinsic time delay for T-gate HEMT is 12 ps. These results prove that the T-shaped HEMT is more preferable for high frequency operations like radar communication, satellite communication, wireless communication, etc.

Keywords: high electron mobility transistor; cut-off frequency; intrinsic time delay.

DOI: 10.1504/IJNP.2019.099182

International Journal of Nanoparticles, 2019 Vol.11 No.2, pp.113 - 129

Available online: 29 Mar 2019 *

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