Title: Investigation of dose and development time for thin e-beam resist poly(methyl methacrylate) for large area dense nanopattern applications

Authors: Oktay Göktaş; Dilek Çakıroğlu; Özal Yıldırım; Nebile Işık Göktaş

Addresses: Faculty of Engineering, Department of Computer Engineering, Munzur University, TR-62000, Tunceli, Turkey ' Faculty of Engineering, Department of Computer Engineering, Munzur University, TR-62000, Tunceli, Turkey ' Faculty of Engineering, Department of Computer Engineering, Munzur University, TR-62000, Tunceli, Turkey ' Faculty of Engineering, Department of Computer Engineering, Munzur University, TR-62000, Tunceli, Turkey

Abstract: With the advance of nanotechnology, the demand for very dense nanopatterns over large areas continuously increases. Electron beam lithography is one of the main tools to realise this type of nanopattern. In this study we investigate the effect and interrelation of dose and development time for electron beam resist poly(methyl methacrylate) (PMMA) for the realisation of very large area and very dense nanopatterns. For this purpose a pattern consisting of a lattice of holes with radius of 80 nm and lattice constant of 200 nm has been designed, electron beam lithography is realised on a thin resist and a detailed SEM image inspection of the pattern is recorded. Hough transform, a pattern recognition method for the digital images, is applied to SEM images to measure the radii of the holes on the images. Interrelation between dose and development time is investigated. It is found that for a very large area of dense nanopatterns the lithographic process works better for development times shorter than typically used ones.

Keywords: electron beam lithography; Hough transform.

DOI: 10.1504/IJNT.2018.098431

International Journal of Nanotechnology, 2018 Vol.15 No.8/9/10, pp.663 - 668

Available online: 22 Mar 2019 *

Full-text access for editors Access for subscribers Purchase this article Comment on this article