Title: Effects of interfacial energy and annealing on the microstructure of NiTe2 thin films on glass substrate

Authors: Lee Sung Hyuk; Tae Won Yuk; Kyu Hyoung Lee; Suk Jun Kim

Addresses: Department of Materials and Chemical Engineering, Korea University of Technology and Education (KOREATECH), Cheonan 31253, South Korea ' Department of Materials and Chemical Engineering, Korea University of Technology and Education (KOREATECH), Cheonan 31253, South Korea ' Department of Materials Science and Engineering, Yonsei University, Seoul 03722, South Korea ' Department of Materials and Chemical Engineering, Korea University of Technology and Education (KOREATECH), Cheonan 31253, South Korea

Abstract: A specific sputtering technique and an ex situ annealing process increased both the grain size of NiTe2 thin films and the number of grains with basal planes parallel to the substrate. These properties are important when utilising NiTe2 as transparent electrodes, because larger grains lower the electrical resistivity. In addition, grains arranged in specific directions are helpful for exfoliation in order to reduce their thicknesses. The NiTe2 films fabricated by the compound sputtering technique exhibited a lower interfacial energy between the film and the glass substrate as compared to those prepared by co-sputtering. The lowered interfacial energy resulted in larger grains in the compound-sputtered films as compared to those in the co-sputtered films. Ex situ annealing enabled a further increase in the grain size from 63.4 nm to 140 nm.

Keywords: transparent electrode; TMDCs; transition metal dichalcogenide; two-dimensional materials; NiTe2; magnetron sputtering.

DOI: 10.1504/IJNT.2018.096351

International Journal of Nanotechnology, 2018 Vol.15 No.6/7, pp.611 - 619

Received: 08 May 2021
Accepted: 12 May 2021

Published online: 21 Nov 2018 *

Full-text access for editors Access for subscribers Purchase this article Comment on this article