Title: Improvement of densification uniformity of carbon/silicon carbide composites during chemical vapour infiltration

Authors: Kyung-Mi Kim; Jin-Won Seo; Kyoon Choi; Jong-Heun Lee

Addresses: KICET Icheon Branch, Korea Institute of Ceramic Engineering and Technology, 30 Gyeongchung-ro, Sindun-myeon, Icheon-si, Gyeonggi-do 17303, South Korea; Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, South Korea ' KICET Icheon Branch, Korea Institute of Ceramic Engineering and Technology, 30 Gyeongchung-ro, Sindun-myeon, Icheon-si, Gyeonggi-do 17303, South Korea ' KICET Icheon Branch, Korea Institute of Ceramic Engineering and Technology, 30 Gyeongchung-ro, Sindun-myeon, Icheon-si, Gyeonggi-do 17303, South Korea ' Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, South Korea

Abstract: We have investigated the influence of the process parameters on the density and distribution of 2.5D carbon preforms during chemical vapour infiltration (CVI) of silicon carbide. The lower the pressure and the substrate temperature, the higher the density and its uniformity. The temperature of the lower part of the disc-shaped specimen was as low as 1000°C to suppress the surface reaction that caused the closure of the open porosity. The specimen of 1000°C under 10 torr resulted in the density of 72.2% and the standard deviation of 13.9%., while that of 1000°C under 50 torr showed the density of 69.1% and the standard deviation of 18.6%. The low density of the specimen was mainly attributed to the large voids between the carbon bundles.

Keywords: carbon fibre; silicon carbide; CVI; chemical vapour infiltration; CMC; ceramic matrix composite; high temperature ceramics.

DOI: 10.1504/IJNT.2018.096346

International Journal of Nanotechnology, 2018 Vol.15 No.6/7, pp.555 - 567

Received: 08 May 2021
Accepted: 12 May 2021

Published online: 21 Nov 2018 *

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