Title: Complementary memristive diode cells for the memory matrix of a neuromorphic processor

Authors: O.V. Maevsky; A.D. Pisarev; A.N. Busygin; S.Yu. Udovichenko

Addresses: Research-Educational Center 'Nanotechnology', Tyumen State University, Volodarskogo st. 6, 625003, Tyumen, Russia ' Research-Educational Center 'Nanotechnology', Tyumen State University, Volodarskogo st. 6, 625003, Tyumen, Russia ' Research-Educational Center 'Nanotechnology', Tyumen State University, Volodarskogo st. 6, 625003, Tyumen, Russia ' Research-Educational Center 'Nanotechnology', Tyumen State University, Volodarskogo st. 6, 625003, Tyumen, Russia

Abstract: This research covers the sphere of neuromorphic electronics, with a new memory cell developed. Its circuit design and topology is based on a complementary memristor, which is switched through a Zener diode. The above-mentioned cells can be implemented on-chip in the form of a parallel matrix or on-bit access type to a storage device in a neuromorphic processor. The suggested topology of a memristor-diode cell enables a high degree of integration in the case these cells get combined in a very large matrix. In this regard, all the square matrices are filled with memristor cells of a nanometric size. The rest of large elements are moved to the matrix periphery to vacate the specific square area of memristor technological placement. The cell under discussion implicates the parallel connection of electrical loads in the matrix related to simple memristor circuit crossbars since the total resistance of each cell always remains high, and the current resistance through complementary memristors is always minimal.

Keywords: neuroprocessor; memory matrix; complementary memristors; the topology of a nanometre size cell; vacuum magnetron sputtering.

DOI: 10.1504/IJNT.2018.094795

International Journal of Nanotechnology, 2018 Vol.15 No.4/5, pp.388 - 393

Received: 08 May 2021
Accepted: 12 May 2021

Published online: 10 Sep 2018 *

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