Authors: Prasit Kumar Bandyopadhya; Arindam Biswas; A.K. Bhattacharjee; Aritra Acharyya
Addresses: Department of Electronics and Communication Engineering, Dumkal Institute of Engineering and Technology, Murshidabad, WB – 742406, India ' Department of Electronics and Communication Engineering, Asansol Engineering College, Vivekananda Sarani, Kanyapur, Asansol, WB – 713305, India ' Department of Electronics and Communication Engineering, National Institute of Technology, Dugrapur, WB – 713209, India ' Department of Electronics and Communication Engineering, Cooch Behar Government Engineering College, Harinchawra, Ghughumari, WB – 736170, India
Abstract: A major amount of energy of mobile electrons and holes in a semiconductor under electric field are lost due to inter-carrier collisions prior to ionising collision. This fact causes a decrease in the ionisation probability which leads to the deterioration in ionisation rates especially when the doping density is high. The effects of this phenomenon on the high frequency and noise properties of highly doped impact avalanche transit time (IMPATT) devices based on different wide bandgap (WBG) semiconductors, like 4H-SiC, Wurtzite-GaN (Wz-GaN) and type-IIb diamond (C) have been studied in this paper. Significant deteriorations in the diodes' high frequency and noise performance have been observed in the simulation results. The simulation results have been compared with the experimental data in order to validate those.
Keywords: inter-carrier interactions; impact ionisation; impact avalanche transit time; IMPATT; millimetre-wave; terahertz.
International Journal of Nanoparticles, 2018 Vol.10 No.1/2, pp.124 - 140
Received: 08 Dec 2017
Accepted: 20 Jan 2018
Published online: 19 Jun 2018 *