Title: Study of gamma/X-ray interaction in some diodes and transistors

Authors: H.C. Manjunatha; L. Seenappa; K.N.. Sridhar; Chikka Hanumantharayappa

Addresses: Department of Physics, Government College for Women, Kolar 563101, Karnataka, India ' Department of Physics, Government College for Women, Kolar 563101, Karnataka, India; Research and Development Centre, Bharathiar University, Coimbatore 641046, India ' Department of Physics, Government First Grade College, Kolar 563101, Karnataka, India ' Vivekananda Degree College, Bangalore 560 055, Karnataka, India

Abstract: We have studied the gamma radiation effects by computing the parameters such as mass attenuation coefficient (MAC), linear attenuation coefficient (LAC), half value layer (HVL), tenth value layer (TVL) and electric conductivity for different types of diodes and transistors, such as small outline transistor. Among the all studied diodes, the diode DO-41 is less sensitive and the diode SOT-323 single diode is more sensitive to gamma radiation compared to other studied diodes. Among the all studied transistors, the transistor TO-220 is less sensitive and the transistor SOT-323 is more sensitive to gamma radiation compared to other studied transistors. The conductivities of transistor and diodes are not constant when they are exposed to high gamma dose. The conductivity varies with the energy of gamma radiation. This work is useful in the selection of electronic equipment in the fields of aerospace, nuclear reactor and weapons communities and particle accelerators.

Keywords: gamma/X-ray; diode; transistor.

DOI: 10.1504/IJNEST.2017.090659

International Journal of Nuclear Energy Science and Technology, 2017 Vol.11 No.4, pp.377 - 389

Received: 14 Aug 2017
Accepted: 26 Jan 2018
Published online: 25 Mar 2018 *

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