Title: Reduction of isotropic etch for silicon nanowires created by metal assisted deep reactive ion etching
Authors: Tung Thanh Bui; Chien Mau Dang
Addresses: Laboratory for Nanotechnology, Vietnam National University-Ho Chi Minh City, Community 6, Linh Trung Ward, Thu Duc District, Ho Chi Minh City, Vietnam ' Laboratory for Nanotechnology, Vietnam National University-Ho Chi Minh City, Community 6, Linh Trung Ward, Thu Duc District, Ho Chi Minh City, Vietnam
Abstract: Silicon nanowires were created by deep reactive ion etching (DRIE) using gold nanoparticles as a mask. Gold nanoparticle masks were created by rapid thermal annealing of an evaporated gold thin film. By using different inert gases for the annealing process, many shapes of Au NPs were created including sphere and hemisphere. Parameters such as the gold nanoparticles' shape as well as the DRIE bias voltage were studied to form highly vertical silicon nanowires while ensuring the smallest possible isotropic etch.
Keywords: Si NWs; deep reactive ion etching; DRIE; Au NPs; isotropic etching; bias voltage.
International Journal of Nanotechnology, 2018 Vol.15 No.1/2/3, pp.93 - 107
Available online: 23 Jan 2018 *Full-text access for editors Access for subscribers Purchase this article Comment on this article