Title: Effect of dose loss of phosphorus on capacitance-voltage characteristics of n-type poly-Si junctionless thin-film transistors
Authors: Jung-Ruey Tsai; Ting-Ting Wen; Horng-Chih Lin
Addresses: Department of Photonic and Communication Engineering, Asia University, No. 500, Lioufeng Rd., Wufeng, Taichung, 41354, Taiwan; Department of Medical Research, China Medical University Hospital, China Medical University, No. 91, Hsueh-Shih Rd., Taichung, 40402, Taiwan ' Nano Facility Center, National Chiao Tung University, No. 1001, Ta-Hsueh Rd., Hsinchu 300, Taiwan ' Department of Electronics Engineering, Institute of Electronics, National Chiao Tung University, No. 1001, University Rd., Hsinchu 300, Taiwan
Abstract: This study examines the effects of the dose loss of phosphorus on the capacitance-voltage characteristics of an n-type polycrystalline silicon junctionless (JL) transistor using experimental, analytical and simulated analyses. It clearly demonstrates that the gate voltage increases as the doping concentration in the channel of the JL transistor decreases, maintaining constant capacitance because the depletion region is easily formed at the surface of the channel with a low doping concentration. The critical gate voltage (VGC) is defined as the applied gate voltage that induces the gate capacitance at the kink of the C-V curve. The simulated results clearly suggest that the critical gate voltage increases linearly with the percentage of dose loss of phosphorus.
Keywords: dose loss; phosphorus; interface segregation; interface trap; junctionless transistor; capacitance-voltage.
International Journal of Nanotechnology, 2017 Vol.14 No.12, pp.1066 - 1077
Published online: 23 Sep 2017 *Full-text access for editors Access for subscribers Purchase this article Comment on this article