Title: Effects of growth temperature on Mg-doped ZnO films fabricated by pulsed-laser deposition

Authors: Hau-Wei Fang; Jenh-Yih Juang; Shiu-Jen Liu

Addresses: Department of Materials Science and Engineering, National Chiao Tung University, 1001 Ta Hsueh Road, Hsin-Chu, 30010, Taiwan ' Department of Electrophysics, National Chiao Tung University, 1001 Ta Hsueh Road, Hsin-Chu, 30010, Taiwan ' Applied Physics Laboratory, National Taiwan Normal University, No. 2, Sec. 1, Renai Rd., LinKou Dist., New Taipei City, 24449, Taiwan

Abstract: Magnesium-doped zinc oxide (MZO) films were fabricated by pulsed-laser deposition (PLD) at various substrate temperatures (Ts). The substitution of Mg for Zn sites (MgZn) in the films was confirmed by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and room-temperature photoluminescence (RTPL) measurements. Characteristic deep-level emissions (DLE) observed in the RTPL spectra further indicate the presence of Zn vacancies (VZn) in the MZO films. Moreover, it was found that the intensity of the blue emission corresponding to VZn increases with increasing Ts, indicating the important role played by Ts on the incorporation of Mg into ZnO matrix. Hall effect measurements reveal the p-type conduction of the MZO films grown at 400°C. The p-type characteristic is attributed to the formation of nMgZn - VZn complex which could act as acceptor for MZO films.

Keywords: p-type; ZnO films; photoluminescence; X-ray photoelectron spectroscopy; XPS; pulsed-laser deposition; PLD; Mg doping.

DOI: 10.1504/IJNT.2017.087776

International Journal of Nanotechnology, 2017 Vol.14 No.12, pp.992 - 1000

Published online: 23 Sep 2017 *

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