Authors: Sana Kausar; Shirish Joshi
Addresses: Department of Physics, Govt. Motilal Vigyan Mahavidyalaya, Bhopal, Madhya Pradesh, India ' Department of Physics, Govt. Motilal Vigyan Mahavidyalaya, Bhopal, Madhya Pradesh, India
Abstract: In this paper structure of a H-passivated silicon nanowire along  direction with hexagonal cross section is defined by using Virtual nanolab (VNL), and set up a nanoscale field effect transistor (FET) structure with a wrap-around gate. Then the transmission spectrum and conductance is computed as the gate bias is varied. The device characteristic curve and conductance with respect to gate voltage is studied. Also, the effect of doping of Al atom on characteristic curve and conductance of nanoscale field effect transistor is analysed.
Keywords: silicon nanowire transistor; single electron transistor; SET; nanowire.
International Journal of Nanoparticles, 2017 Vol.9 No.2, pp.111 - 119
Available online: 16 Aug 2017 *Full-text access for editors Access for subscribers Purchase this article Comment on this article