Title: Neuromorphic coprocessor prototype based on mixed metal oxide memristors

Authors: A.N. Bobylev; A.N. Busygin; A.D. Pisarev; S.Yu. Udovichenko; V.A. Filippov

Addresses: Research-Educational Center 'Nanotechnology', Tyumen State University, Volodarskogo st. 6, 625003, Tyumen, Russia ' Research-Educational Center 'Nanotechnology', Tyumen State University, Volodarskogo st. 6, 625003, Tyumen, Russia ' Research-Educational Center 'Nanotechnology', Tyumen State University, Volodarskogo st. 6, 625003, Tyumen, Russia ' Research-Educational Center 'Nanotechnology', Tyumen State University, Volodarskogo st. 6, 625003, Tyumen, Russia ' Research-Educational Center 'Nanotechnology', Tyumen State University, Volodarskogo st. 6, 625003, Tyumen, Russia

Abstract: This paper presents developments in the field of nanoscale neuromorphic electronics. The developed device represents the integration of the memristive crossbar with commercially available electronics. The crossbar was deposited by PVD assisted by electron-beam lithography. The 20 nm mixed titanium-aluminium oxide film was used as a memristive layer in the crossbar. The device was developed as a complex consisting of two microcontrollers bound by I2C interface and connected to a PC via USB. The software consists of the neural network part implemented on microcontrollers and the control part installed on PC.

Keywords: neuromorphic coprocessors; metal oxide memristors; neural networks; neuromorphic electronics; nanoelectronics; nanotechnology; microcontrollers; titanium oxide; aluminium oxide; memristive crossbar.

DOI: 10.1504/IJNT.2017.083444

International Journal of Nanotechnology, 2017 Vol.14 No.7/8, pp.698 - 704

Received: 08 May 2021
Accepted: 12 May 2021

Published online: 30 Mar 2017 *

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