Title: Composition and luminescence of Si and SiO2 layers co-implanted with Ga and N ions

Authors: D.S. Korolev; A.N. Mikhaylov; A.I. Belov; A.A. Konakov; V.K. Vasiliev; D.E. Nikolitchev; S.I. Surodin; D.I. Tetelbaum; Mahesh Kumar

Addresses: Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia ' Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia ' Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia ' Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia ' Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia ' Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia ' Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia ' Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia ' Department of Electrical Engineering, Indian Institute of Technology Jodhpur, 342011 Jodhpur, India

Abstract: With the aim to establish the possibility of synthesis of GaN inclusions by co-implantation of Ga and N ions in silicon and SiO2 films on a silicon substrate, the chemical composition and photoluminescence of implanted layers have been investigated. It is observed that the heavy loss of implanted atoms occurs owing to the out-diffusion (Ga from Si, and Ga and N from SiO2) in the process of post-implantation annealing. Preliminary implantation of nitrogen to form silicon nitride or oxynitride layers is shown to reduce the degree of impurity losses. In the photoluminescence spectrum of both Si and SiO2 subjected to Ga and N co-implantation, the band at 530-550 nm is present, which can be related to 'defect' luminescence of GaN.

Keywords: gallium nitride; silicon; silicon dioxide; SiO2; ion synthesis; co-implantation; photoluminescence; nitrogen; chemical composition; silicon nitride; oxynitride layers; impurity losses.

DOI: 10.1504/IJNT.2017.083438

International Journal of Nanotechnology, 2017 Vol.14 No.7/8, pp.637 - 645

Received: 08 May 2021
Accepted: 12 May 2021

Published online: 30 Mar 2017 *

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