Title: Filamentary model of bipolar resistive switching in capacitor-like memristive nanostructures on the basis of yttria-stabilised zirconia

Authors: D.V. Guseinov; D.I. Tetelbaum; A.N. Mikhaylov; A.I. Belov; M.E. Shenina; D.S. Korolev; I.N. Antonov; A.P. Kasatkin; O.N. Gorshkov; E.V. Okulich; V.I. Okulich; A.I. Bobrov; N.V. Malekhonova; D.A. Pavlov; E.G. Gryaznov

Addresses: Research Institute of Physics and Technology and Department of Physics, Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia ' Research Institute of Physics and Technology and Department of Physics, Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia ' Research Institute of Physics and Technology and Department of Physics, Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia ' Research Institute of Physics and Technology and Department of Physics, Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia ' Research Institute of Physics and Technology and Department of Physics, Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia ' Research Institute of Physics and Technology and Department of Physics, Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia ' Research Institute of Physics and Technology and Department of Physics, Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia ' Research Institute of Physics and Technology and Department of Physics, Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia ' Research Institute of Physics and Technology and Department of Physics, Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia ' Research Institute of Physics and Technology and Department of Physics, Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia ' Research Institute of Physics and Technology and Department of Physics, Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia ' Research Institute of Physics and Technology and Department of Physics, Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia ' Research Institute of Physics and Technology and Department of Physics, Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia ' Research Institute of Physics and Technology and Department of Physics, Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia ' Research Institute of Physics and Technology and Department of Physics, Lobachevsky University, 23/3 Gagarin Prospect, 603950 Nizhny Novgorod, Russia

Abstract: A filamentary model of bipolar resistive switching has been developed for the Au/ZrO2(Y)/TiN/Ti memristive nanostructures by using kinetic Monte-Carlo approach for the migration of oxygen vacancies at the stages of electroforming, SET, and RESET processes observed experimentally in the current-voltage switching hysteresis. Statistics of the forming and switching voltages are collected and used to simulate current-voltage characteristics based on a simplified multi-filament model. It is demonstrated that both abrupt and gradual switching behaviours can be determined by the parameters of the statistical distribution of switching voltages of different conductive channels - filaments. The results can be used for the development of new-generation nonvolatile memory.

Keywords: memristive nanostructures; yttria stabilised zirconia; magnetron sputtering; bipolar resistive switching; simulation; kinetic Monte-Carlo method; filamentary models; capacitors; nanotechnology; switching hysteresis; filaments; nonvolatile memory; oxygen vacancies; electroforming; switching behaviours; switching voltages.

DOI: 10.1504/IJNT.2017.083436

International Journal of Nanotechnology, 2017 Vol.14 No.7/8, pp.604 - 617

Received: 08 May 2021
Accepted: 12 May 2021

Published online: 30 Mar 2017 *

Full-text access for editors Access for subscribers Purchase this article Comment on this article