Title: Facile fabrication of carbon nanotube network thin film transistors for device platforms

Authors: H.Y. Zheng; N.O.V. Plank

Addresses: School of Chemical and Physical Sciences, Victoria University of Wellington; MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Chemical and Physical Sciences, Victoria University of Wellington, P.O. Box 600, Wellington, New Zealand ' School of Chemical and Physical Sciences, Victoria University of Wellington; MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Chemical and Physical Sciences, Victoria University of Wellington, P.O. Box 600, Wellington, New Zealand

Abstract: Carbon nanotube network thin film transistors with channel lengths of 10-40 μm are fabricated from a nanotube buckypaper with 99% semiconducting carbon nanotubes by surfactant free solution routes. The carbon nanotubes are suspended in 1,2-dichlorobenzene by ultrasonication at concentrations of 7.9 μg/ml, 3.4 μg/ml and 2.6 μg/ml, resulting in carbon nanotube field effect transistors with tube densities ranging from 5 tube/μm2 up to 32 tube/μm2. The device percolation threshold is 11 tube/μm2 with optimum device performances of on/off current ratio 7200, mobility 0.55 cm2/V·s and Vth = +1 V. Devices with tube density above the percolation threshold are typically metallic-like. By encapsulating with poly-4-vinylphenol cross-linked with poly-(melamine-co-formaldehyde), the hysteresis becomes independent of channel length and the device performance approaches the best devices at the percolation threshold.

Keywords: carbon nanotubes; CNTs; thin film FETs; field effect transistors; TFTs; solution processing; hysteresis; encapsulation; PVP; poly-4-vinylphenol; device platforms; percolation threshold; nanotechnology.

DOI: 10.1504/IJNT.2017.082473

International Journal of Nanotechnology, 2017 Vol.14 No.1/2/3/4/5/6, pp.505 - 518

Published online: 21 Feb 2017 *

Full-text access for editors Access for subscribers Purchase this article Comment on this article