Title: Amorphous layers by electron beam evaporator deposition for hetero-junction with intrinsic thin layer solar cells applications

Authors: Sally Liu; Zhi-Yu Chen; Shu-Tong Chang; Min-Hung Lee

Addresses: Institute of Electro-Optical Science and Technology, National Taiwan Normal University, 88, sec. 4, Ting-Chou Rd., Taipei, 11677, Taiwan ' Institute of Electro-Optical Science and Technology, National Taiwan Normal University, 88, sec. 4, Ting-Chou Rd., Taipei, 11677, Taiwan ' Department of Electrical Engineering, National Chung Hsing University, 145, Xingda Rd., South Dist., Taichung, 40277, Taiwan ' Institute of Electro-Optical Science and Technology, National Taiwan Normal University, 88, Sec. 4, Ting-Chou Rd., Taipei, 11677, Taiwan

Abstract: A low-cost process with electron beam evaporator deposition for amorphous layers was demonstrated in hetero-junction with intrinsic thin layer (HIT) solar cell. The cleaning process with saw damage removal procedure and the annealing temperature are also discussed in this work. The open-circuit voltage (Voc) and short-circuit current density (Jsc) were obtained as 285 mV and 2.9 mA/cm², respectively, with 5 min saw damage removal and 450°C forming gas annealing. Therefore, the low-cost process with the electron beam evaporator deposition could possibly fabricate the HIT solar cell and be a candidate for future higher performance photovoltaic device with optimisation process condition.

Keywords: heterojunctions; crystalline silicon; electron beam evaporation; intrinsic thin layers; HIT solar cells; photovoltaics; amorphous layers; solar energy; solar power; saw damage removal; forming gas annealing; optimisation.

DOI: 10.1504/IJNT.2016.078555

International Journal of Nanotechnology, 2016 Vol.13 No.7, pp.485 - 491

Available online: 17 Aug 2016 *

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