Title: Suppression of surface leakage current in InSb photodiode by ZnS passivation

Authors: Sehun Park; Daehan Choi; Hwanyeol Park; Daeyoung Moon; Euijoon Yoon; Yongjo Park; Duk Kyu Bae

Addresses: Department of Materials Science and Engineering, Seoul National University, Gwanakro1, Gwanak-gu, Seoul, 151-744, South Korea ' Department of Materials Science and Engineering, Seoul National University, Gwanakro1, Gwanak-gu, Seoul, 151-744, South Korea ' Department of Materials Science and Engineering, Seoul National University, Gwanakro1, Gwanak-gu, Seoul, 151-744, South Korea ' Department of Materials Science and Engineering, Seoul National University, Gwanakro1, Gwanak-gu, Seoul, 151-744, South Korea ' Department of Materials Science and Engineering, Seoul National University, Gwanakro1, Gwanak-gu, Seoul, 151-744, South Korea; Energy Semiconductor Research Centre, Advanced Institute of Convergence Technology, Seoul National University, Gwangkyoro 145, Yeongtong-gu, Suwon, Gyeonggi-do, 443-270, South Korea ' Energy Semiconductor Research Centre, Advanced Institute of Convergence Technology, Seoul National University, Gwangkyoro 145, Yeongtong-gu, Suwon, Gyeonggi-do, 443-270, South Korea ' Hexa Solution Co., Ltd., and Energy Semiconductor Research Centre, Advanced Institute of Convergence Technology, Seoul National University, Gwangkyoro 145, Yeongtong-gu, Suwon, Gyeonggi-do, 443-270, South Korea

Abstract: We have investigated the suppression of surface leakage current in InSb photodiodes using ZnS passivation. Capacitance-voltage characteristics for metal-insulator-semiconductor (MIS) devices showed that positive fixed charges were introduced in the ZnS film and they compensated the negative fixed charges in InSb. AES and PL analysis revealed that the ZnS films were S-deficient and the positive fixed charges were originated from the sulphur vacancy. An InSb pn photodiode structures passivated with ZnS film deposited at 1.5 Å/s showed the lowest surface leakage current, which is consistent with the result that it was close to the ideal flat-band condition. This indicates that deposition of S-deficient ZnS film is an effective way to suppress the dark current in InSb photodiode.

Keywords: indium antimonide; InSb photodiodes; surface passivation; zinc sulphide; surface potential; surface leakage current; ZnS passivation; metal insulator semiconductors.

DOI: 10.1504/IJNT.2016.077089

International Journal of Nanotechnology, 2016 Vol.13 No.4/5/6, pp.392 - 401

Published online: 19 Jun 2016 *

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