Authors: M. Manouchehrian
Addresses: Department of Physics, South Tehran Branch, Islamic Azad University, P.O. Box 31485-498, Tehran, Iran
Abstract: In this work, TeO2 thin films were investigated for use as hydrogen sulphide gas sensors. For this purpose, a TeO2 thin film has been deposited on ITO glass substrates by thermal evaporation and the influence of deposition temperature on structural and sensitivity of the TeO2 thin film for measuring H2S gas is studied. X-ray diffraction patterns indicate that as the deposition temperature increases, the crystallisation improves. Observing the images obtained by scanning electron microscope (SEM), it is seen that the grains join to each other and structural changes from granular to cluster with deposition temperature increase. Studying the effect of deposition temperature on H2S gas measurement, it became obvious that as the deposition temperature increases, the sensitivity decreases and the response and recovery times increase. The aim of this work was to study the effect of deposition temperature on structural and gas sensing properties of TeO2 thin films.
Keywords: TeO2 thin films; tellurium dioxide; gas sensors; hydrogen sulphide; XRD; X-ray diffraction; SEM; scanning electron microscopy; deposition temperature; crystallisation; structural properties; gas sensing properties.
International Journal of Microstructure and Materials Properties, 2015 Vol.10 No.5/6, pp.463 - 471
Received: 14 Oct 2015
Accepted: 09 Dec 2015
Published online: 28 Feb 2016 *