Title: A simulation study of an operational amplifier with non-ideal carbon nanotube transistor: case of scattering effect

Authors: W. Makni; M. Najari; H. Samet

Addresses: Electrical Engineering Department, LETI Laboratory, National School of Engineering of Sfax, University of Sfax, Route Soukra, Km 4, 3038 Sfax, Tunisia ' Faculty of Sciences of Gabes, Department of Physics, University of Gabes, Erriadh City 6072 Zrig, Gabes, Tunisia ' Electrical Engineering Department, LETI Laboratory, National School of Engineering of Sfax, University of Sfax, Route Soukra, Km 4, 3038 Sfax, Tunisia

Abstract: This paper presents an extension of the ballistic carbon nanotube field-effect transistor (CNTFET) Raychowdhury [1] compact model with adding acoustic phonon (AP) and optical phonon scattering (OP) mechanisms. These mechanisms cause noise in the device. To obtain an accurate compact model, the flicker and thermal noise-models should be included. This model can be easily implemented with a hardware description language (HDL)-like Verilog-A in the Agilent Advanced Design System simulation tool ADS. The impact of the AP scattering mechanism on operational amplifier (Op Amp) circuit performances is investigated and the simulation results are compared with respect to Op Amp including both AP and OP scattering and to Amp Op using ballistic model. Hence, degradation in the Op Amp performances with AP and OP scattering models is observed especially in gain and bandwidth figure of merits in addition to the increase of the flicker noise in the device.

Keywords: CNTFET; carbon nanotube field-effect transistors; op amps; operational amplifiers; Verilog-A; scattering effect; acoustic phonon; optical phonon; flicker noise; simulation; nanotechnology; simulation; carbon nanotubes; CNTs; ballistic modelling; gain; bandwidth.

DOI: 10.1504/IJNT.2015.068892

International Journal of Nanotechnology, 2015 Vol.12 No.8/9, pp.723 - 737

Available online: 15 Apr 2015 *

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