Title: Effect of Al doping on electrical properties of Si nanowire

Authors: Sana Kausar; Shirish Joshi; Anurag Srivastava

Addresses: Department of Physics, Govt. M.V.M. College Bhopal, 462001, Madhya Pradesh, India ' Department of Physics, Govt. M.V.M. College Bhopal, 462001, Madhya Pradesh, India ' Advanced Material Research Group, Computational Nanoscience and Technology Lab, ABV-Indian Institute of Information Technology and Management Gwalior, Morena Link Road, Gwalior Madhya Pradesh, 474010, India

Abstract: In this paper we present a theoretical study of the electron transport properties of Si nanowire and also the electron transport properties of nanowire doped with Al atoms by using Atomistix toolkit (ATK). The differences in the I-V curves obtained with each configuration and their technologic consequences are discussed in detail. ATK is a package which provides efficient calculations of materials transport properties and realistic device simulations to extract current-voltage and transfer characteristics. The simulation results were obtained using local density approximation based on density functional theory (DFT).

Keywords: DFT; density functional theory; LDA; Atomistix toolkit; ATK; aluminium doping; electrical properties; silicon nanowires; nanotechnology; electron transport properties; simulation; current voltage.

DOI: 10.1504/IJNP.2014.064864

International Journal of Nanoparticles, 2014 Vol.7 No.2, pp.81 - 91

Received: 22 Dec 2012
Accepted: 12 Nov 2013
Published online: 30 Sep 2014 *

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