Title: Power efficient design of an amplifier using submicron technology

Authors: V. Rukkumani; N. Devarajan

Addresses: Department of Electronics and Instrumentation Engineering, Sri Ramakrishna Engineering College, N.G.G.O. Colony Post, Coimbatore-641022, Tamilnadu, India ' Department of Electrical and Electronics Engineering, Government College of Technology, Coimbatore-641013, Tamilnadu, India

Abstract: In an electronics circuit, a set of components named as modules or blocks are connected through 'wires' called as interconnects. Floorplanning and placement are used to reduce the total area, size, power, temperature and cost of any circuit design. Various computational techniques are used to calculate and minimise the above parameters. A single IC consists of number of processing elements (PEs), which works on various voltage ranges. This makes IC power consumption increase; thereby temperature of the chip also increases. The increased temperature positions in some parts are called as hot-spots. The main goal of this paper is to focus on calculation of area, power and hotspot of any complicated VLSI circuit and to show microwind simulation output for future design of any complicated circuits for various temperature ranges. The deep submicron technology is widely used for design of any analogue circuits in microwind.

Keywords: deep submicron technology; microwind simulation; hotspots; temperature analysis; nanoscale technology; power consumption; nanotechnology; circuit design; VLSI circuits.

DOI: 10.1504/IJMRS.2014.064334

International Journal of Mechanisms and Robotic Systems, 2014 Vol.2 No.1, pp.1 - 16

Received: 24 Jun 2012
Accepted: 04 Jan 2013

Published online: 18 Aug 2014 *

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