Title: Theoretical analysis of GaSb/GaAs QWIP

Authors: Md. Aref Billaha; Mukul K. Das

Addresses: Department of Electronics Engineering, Indian School of Mines, Dhanbad-826004, Jharkhand, India ' Department of Electronics Engineering, Indian School of Mines, Dhanbad-826004, Jharkhand, India

Abstract: This paper investigates a theoretical analysis of the inter-subband transition GaSb/GaAs quantum well infrared photodetector (QWIP) considering large valence band discontinuity. Performance parameters such as Eigen energy states, absorption coefficient as well as responsivity are obtained for bound to bound inter-subband transition of QWIP. The confinement energies for the first heavy- and light-hole states are obtained as 0.1718 eV and 0.4329 eV, respectively. A broad detection window of 2 to 5 µm with peak responsivity of about 53.8 µA/W at wavelength of 2.7 µm is obtained at 5 V bias voltage.

Keywords: intersubband transition; quantum wells; QW infrared photodetectors; QWIP; absorption; responsivity; GaSb; gallium antimonide; GaAs; gallium arsenide; valence band discontinuity.

DOI: 10.1504/IJMATEI.2014.064281

International Journal of Materials Engineering Innovation, 2014 Vol.5 No.3, pp.238 - 246

Received: 04 May 2013
Accepted: 31 Aug 2013

Published online: 30 Aug 2014 *

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