Theoretical analysis of GaSb/GaAs QWIP
by Md. Aref Billaha; Mukul K. Das
International Journal of Materials Engineering Innovation (IJMATEI), Vol. 5, No. 3, 2014

Abstract: This paper investigates a theoretical analysis of the inter-subband transition GaSb/GaAs quantum well infrared photodetector (QWIP) considering large valence band discontinuity. Performance parameters such as Eigen energy states, absorption coefficient as well as responsivity are obtained for bound to bound inter-subband transition of QWIP. The confinement energies for the first heavy- and light-hole states are obtained as 0.1718 eV and 0.4329 eV, respectively. A broad detection window of 2 to 5 µm with peak responsivity of about 53.8 µA/W at wavelength of 2.7 µm is obtained at 5 V bias voltage.

Online publication date: Sat, 30-Aug-2014

The full text of this article is only available to individual subscribers or to users at subscribing institutions.

 
Existing subscribers:
Go to Inderscience Online Journals to access the Full Text of this article.

Pay per view:
If you are not a subscriber and you just want to read the full contents of this article, buy online access here.

Complimentary Subscribers, Editors or Members of the Editorial Board of the International Journal of Materials Engineering Innovation (IJMATEI):
Login with your Inderscience username and password:

Username:        Password:          Forgotten your password?

Want to subscribe?
A subscription gives you complete access to all articles in the current issue, as well as to all articles in the previous three years (where applicable). See our Orders page to subscribe.

If you still need assistance, please email subs@inderscience.com