Title: Removing the transients electron trapping in P-N junction diode by using soft X-ray annealing method

Authors: Surada Ueamanapong; Itsara Srithanachai; Surasak Niemcharoen; Amporn Poyai

Addresses: Department of Electronics Engineering, Faculty of Engineering, King Mongkut's Institute of Technology Ladkrabang, Bangkok 10520, Thailand ' Department of Electronics Engineering, Faculty of Engineering, King Mongkut's Institute of Technology Ladkrabang, Bangkok 10520, Thailand ' Department of Electronics Engineering, Faculty of Engineering, King Mongkut's Institute of Technology Ladkrabang, Bangkok 10520, Thailand ' Thai Microelectronics Center (TMEC), 51/4 Moo 1, Wang-Takien District, Amphur Muang, Chachoengsao 24000, Thailand

Abstract: This paper describes a transient phenomenon in the reverse current of P-N junctions giving rise to a hump at a specific reverse bias. P-N diode as been fabricated by a deep boron ion implantation (120 keV) and a junction depth around 4 µm is expected. Ion implantation can cause defect in silicon substrate even if the device was cured by annealing process, the defect or its effect is still remained. I-V characteristic has been acquired from −10 V to 0 V in temperature variation of 30-80°C. At the specific condition of −3 V, 80°C humps occurred on the curve and when the device was exposed to X-ray at energy of 40, 55 and 70 keV. The humps were then shifted toward 0 V. Activation energy has been calculated in order to give an insight into the device characteristics. It revealed the presence of a non-uniform density of electron traps corresponding to a broad range of energy levels from about 0.65-0.67 eV above the intrinsic band. This report shows an interesting phenomenon of the deep P-N junction diode modified by X-ray irradiation.

Keywords: transient humps; high energy ion implantation; soft X-ray annealing; electron trapping; P-N junction diodes; reverse current; silicon substrate; X-ray irradiation.

DOI: 10.1504/IJMPT.2014.062948

International Journal of Materials and Product Technology, 2014 Vol.49 No.1, pp.72 - 80

Received: 17 Jul 2013
Accepted: 04 Jan 2014
Published online: 19 Jul 2014 *

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