Title: Punch-through and junction breakdown characteristics for uniaxial strained nano-node metal-oxide-semiconductor field-effect transistors on (100) wafers

Authors: Mu-Chun Wang; Heng-Sheng Huang; Min-Ru Peng; Shea-Jue Wang; Tsao-Yeh Chen; Wen-Shiang Liao; Hsin-Chia Yang; Chuan-Hsi Liu

Addresses: Graduate Institute of Mechatronic Engineering, National Taipei University of Technology, Taipei 10608, Taiwan; Department of Electronic Engineering, Minghsin University of Science and Technology, Hsinchu 30401, Taiwan ' Graduate Institute of Mechatronic Engineering, National Taipei University of Technology, Taipei 10608, Taiwan ' Graduate Institute of Mechatronic Engineering, National Taipei University of Technology, Taipei 10608, Taiwan ' Department of Materials and Resources Engineering, National Taipei University of Technology, Taipei 10608, Taiwan ' Department of Electronic Engineering, Minghsin University of Science and Technology, Hsinchu 30401, Taiwan ' Department of Electronic Engineering, Minghsin University of Science and Technology, Hsinchu 30401, Taiwan ' Department of Electronic Engineering, Minghsin University of Science and Technology, Hsinchu 30401, Taiwan ' Department of Mechatronic Technology, National Taiwan Normal University, Taipei 10644, Taiwan

Abstract: In the nano-regime MOSFET devices, the punch-through effect is more distinct, retarding the reliability tolerance, such as electro-static discharge or latch-up applications. Through the measurement in various device lengths under contact-etch-stop-layer strain process or without strain effect for 45 nm complementary MOS process, the difference of punch-through effect and junction breakdown integrity were able to be classified and exhibited in design applications. After tested data analysis, the junction breakdown issue in PMOSFET was usually greater than that in NMOSFET due to the doping concentrations and the doping species. Generally, the junction breakdown value is independent of channel length variation except the existence of some damage close to the gate/source or gate/drain fringe. In addition, the punch-through voltage for PMOSFET as source/drain current IDS = 1 µA is also larger than that observed for NMOSFET.

Keywords: junction breakdown; punch-through voltage; strain; contact etch stop layer; CESL; uniaxial strained MOSFETs; nano-node MOSFETs; metal oxide semiconductors; field effect transistors; nanotechnology; doping concentrations; doping species; channel length variation.

DOI: 10.1504/IJMPT.2014.062939

International Journal of Materials and Product Technology, 2014 Vol.49 No.1, pp.25 - 40

Received: 17 Jul 2013
Accepted: 01 Dec 2013

Published online: 19 Jul 2014 *

Full-text access for editors Full-text access for subscribers Purchase this article Comment on this article