Title: Improved efficiency of InGaN/GaN light-emitting diodes with Al-doped zinc oxide using dual-plasma-enhanced metal-organic chemical vapour deposition system

Authors: Po-Hsun Lei; Chia-Ming Hsu; Yu-Siang Fan; Sheng-Jhan Ye

Addresses: Institute of Electro-Optical and Material Science, National Formosa University, No. 64, Wunhua Rd., Huwei, Yunlin County 632, Taiwan ' Institute of Electro-Optical and Material Science, National Formosa University, No. 64, Wunhua Rd., Huwei, Yunlin County 632, Taiwan ' Institute of Electro-Optical and Material Science, National Formosa University, No. 64, Wunhua Rd., Huwei, Yunlin County 632, Taiwan ' Institute of Electro-Optical and Material Science, National Formosa University, No. 64, Wunhua Rd., Huwei, Yunlin County 632, Taiwan

Abstract: We have reported aluminium doped zinc oxide (AZO) film grown on sapphire substrate using dual-plasma-enhanced metal-organic chemical vapour deposition (DPEMOCVD) system. The crystalline quality, surface morphology, optical properties, and electrical characteristic of AZO film depend on the deposition temperature and Al content. The 185°C-deposited and 2.88 at%-Al-doped AZO film shows a strong (002) diffraction peak intensity, flat surface morphology, high transmittance in visible range, and low resistivity. The PL peak of AZO film shows a blue-shift as compared to undoped ZnO film due to the Burstein-Moss (BM) effect. Finally, the AZO film was deposited on InGaN/GaN light-emitting diodes (LEDs) as transparent conductive layer (TCL). InGaN/GaN LED with optimal AZO TCL shows the lowest dynamic resistance, highest light output intensity, and narrowest full-width at half-maximum (FWHM) emitting spectrum as compared to those without TCL and with indium-tin-oxide (ITO).

Keywords: aluminium doped doped zinc oxide; AZO; ZnO; dual-plasma-enhanced metal-organic CVD; chemical vapour deposition; InGaN/GaN LEDs; light-emitting diodes; nanoelectronics; nanotechnology; sapphire substrate; deposition temperature; crystalline quality; surface morphology; optical properties; electrical characteristics; indium gallium nitride.

DOI: 10.1504/IJNT.2014.059836

International Journal of Nanotechnology, 2014 Vol.11 No.1/2/3/4, pp.359 - 372

Available online: 14 Mar 2014 *

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